tsm 7n65 650v n-channel power mosfet 1/9 version: c11 ito - 220 to - 220 general description the tsm7n65 n-channel enhancement mode power mosfet is produced by planar stripe dmos technology. this advanced technology has been especially tailor ed to minimize on-state resistance, provide superio r switching performance, and withstand high energy pu lse in the avalanche and commutation mode. these devices are well suited for high efficiency switch mode power supply, power factor correction, electro nic lamp ballast based on half bridge. features low r ds(on) 1.2 (max.) low gate charge typical @ 32nc (typ.) low crss typical @ 25pf (typ.) fast switching block diagram n-channel mosfet ordering information part no. package packing tsm7n65cz c0 to-220 50pcs / tube tsm7n65ci c0 ito-220 50pcs / tube absolute maximum rating (t a =25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 650 v gate-source voltage v gs 30 v continuous drain current ta =25oc i d 6.4 a ta =100oc 3.8 a pulsed drain current * i dm 22 a single pulse avalanche energy (note 2) e as 216 mj repetitive avalanche current (note 1) i ar 6 a total power dissipation @ t c = 25 o c to-220 p tot 125 w ito-220 30 operating junction temperature t j 150 oc storage temperature range t stg -55 to +150 o c * limited by maximum junction temperature product summary v ds (v) r ds(on) ( ) i d (a) 650 1.2 @ v gs =10v 3 pin definition : 1. gate 2. drain 3. source
tsm 7n65 650v n-channel power mosfet 2/9 version: c11 thermal performance parameter symbol limit unit thermal resistance - junction to case to-220 r ? jc 1.0 o c/w ito-220 4.2 thermal resistance - junction to ambient r ? ja 62.5 o c/w note: surface mounted on fr4 board t 10sec electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = 250ua bv dss 650 -- -- v drain-source on-state resistance v gs = 10v, i d = 3a r ds(on) -- 1.0 1.2 gate threshold voltage v ds = v gs , i d = 250ua v gs(th) 2.0 -- 4.0 v zero gate voltage drain current v ds = 650v, v gs = 0v i dss -- -- 1 ua v ds = 650v, v gs = 0v, t c =125oc -- -- 50 gate body leakage v gs = 20v, v ds = 0v i gss -- -- 10 ua forward transfer conductance v ds = 8v, i d = 1a g fs -- 3.7 -- s diode forward voltage i s = 6a, v gs = 0v v sd -- -- 1.6 v dynamic total gate charge v ds = 300v, i d = 6a, v gs = 10v q g -- 32 46 nc gate-source charge q gs -- 6 -- gate-drain charge q gd -- 11 -- input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz c iss -- 905 -- pf output capacitance c oss -- 115 -- reverse transfer capacitance c rss -- 25 -- switching turn-on delay time v gs = 10v, i d = 6a, v dd = 300v, r g = 25 t d(on) -- 14 -- ns turn-on rise time t r -- 14 -- turn-off delay time t d(off) -- 47 -- turn-off fall time t f -- 19 -- reverse recovery time v gs = 0v, i s = 6a, di f /dt = 100a/us t fr -- 638 -- ns reverse recovery charge q fr -- 4.8 -- uc note 1: repetitive rating: pulse width limited by maximum j unction temperature note 2: v dd = 50v, i as =3.6a, l=30mh, v ds =500v note 3: pulse test: pulse width 300us, duty cycle 2% note 4: essentially independent of operating temperature
tsm 7n65 650v n-channel power mosfet 3/9 version: c11 electrical characteristics curve (ta = 25 o c, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current gate charge on-resistance vs. junction temperature source-drain diode forward voltage
tsm 7n65 650v n-channel power mosfet 4/9 version: c11 electrical characteristics curve (ta = 25 o c, unless otherwise noted) on-resistance vs. gate-source voltage threshold voltage maximum safe operating area - to-220 maximum safe operating area - ito-220 normalized thermal transient impedance, junction-to -ambient
tsm 7n65 650v n-channel power mosfet 5/9 version: c11 gate charge test circuit & waveform resistive switching test circuit & waveform e as test circuit & waveform
tsm 7n65 650v n-channel power mosfet 6/9 version: c11 diode reverse recovery time test circuit & waveform
tsm 7n65 650v n-channel power mosfet 7/9 version: c11 ito-220 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot code ito-220 dimension dim millimeters inches min max min max a 10.04 10.07 0.395 0.396 b 6.20 (typ.) 0.244 (typ.) c 2.20 (typ.) 0.087 (typ.) d 1.40 (typ.) 0.055 (typ.) e 15.0 15.20 0.591 0.598 f 0.52 0.54 0.020 0.021 g 2.35 2.73 0.093 0.107 h 13.50 13.55 0.531 0.533 i 1.11 1.49 0.044 0.058 j 2.60 2.80 0.102 0.110 k 4.49 4.50 0.176 0.177 l 1.15 (typ.) 0.045 (typ.) m 3.03 3.05 0.119 0.120 n 2.60 2.80 0.102 0.110 o 6.55 6.65 0.258 0.262
tsm 7n65 650v n-channel power mosfet 8/9 version: c11 to-220 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot code to-220 dimension dim millimeters inches min max min max a 10.000 10.500 0.394 0.413 b 3.740 3.910 0.147 0.154 c 2.440 2.940 0.096 0.116 d - 6.350 - 0.250 e 0.381 1.106 0.015 0.040 f 2.345 2.715 0.092 0.058 g 4.690 5.430 0.092 0.107 h 12.700 14.732 0.500 0.581 j 14.224 16.510 0.560 0.650 k 3.556 4.826 0.140 0.190 l 0.508 1.397 0.020 0.055 m 27.700 29.620 1.060 1.230 n 2.032 2.921 0.080 0.115 o 0.255 0.610 0.010 0.024 p 5.842 6.858 0.230 0.270
tsm 7n65 650v n-channel power mosfet 9/9 version: c11 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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